Eu:CaF2 layers on p-Si„100... grown using molecular beam epitaxy as materials for Si-based optoelectronics
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چکیده
Eu:CaF2 layers have been grown epitaxially on Si using molecular beam epitaxy ~MBE! with the intent of realizing an electrically pumped optical source on Si. Here we present an atomic force microscopy study of the morphological features of MBE-grown Eu:CaF2 on p-type Si~100! substrates and a study of electroluminescence ~EL! from EL devices fabricated from these layers. The surface morphologies of the MBE-grown layers show an increased density of faceted features with increase in epilayer Eu content. X-ray photoelectron spectroscopy ~XPS! data reveal the emergence of satellite peaks around the regular Eu XPS peaks in Eu:CaF2 layer with high Eu content. The characteristics of EL devices fabricated on these layers is presented and a possible EL mechanism is discussed. © 1998 American Vacuum Society. @S0734-211X~98!09403-7#
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تاریخ انتشار 1998